Michael Nastasi

Ion Beam Analysis: Fundamentals and Applications explains the basic characteristics of ion beams as applied to the analysis of materials, as well as ion beam analysis (IBA) of art/archaeological objects. It focuses on the fundamentals and applications of ion beam methods of materials characterization. The book explains how ions interact with solids and describes what information can be gained. It starts by covering the fundamentals of ion beam analysis, including kinematics, ion stopping, Rutherford backscattering, channeling, elastic recoil detection, particle induced x-ray emission, and nuclear reaction analysis. The second part turns to applications, looking at the broad range of potential uses in thin film reactions, ion implantation, nuclear energy, biology, and art/archaeology. Examines classical collision theoryDetails the fundamentals of five specific ion beam analysis techniquesIllustrates specific applications, including biomedicine and thin film analysisProvides examples of ion beam analysis in traditional and emerging research fields Supplying readers with the means to understand the benefits and limitations of IBA, the book offers practical information that users can immediately apply to their own work. It covers the broad range of current and emerging applications in materials science, physics, art, archaeology, and biology. It also includes a chapter on computer applications of IBA.

Ion Beam Analysis: Fundamentals and Applications explains the basic characteristics of ion beams as applied to the analysis of materials, as well as ion beam analysis (IBA) of art/archaeological objects. It focuses on the fundamentals and applications of ion beam methods of materials characterization. The book explains how ions interact with solids and describes what information can be gained. It starts by covering the fundamentals of ion beam analysis, including kinematics, ion stopping, Rutherford backscattering, channeling, elastic recoil detection, particle induced x-ray emission, and nuclear reaction analysis. The second part turns to applications, looking at the broad range of potential uses in thin film reactions, ion implantation, nuclear energy, biology, and art/archaeology. Examines classical collision theoryDetails the fundamentals of five specific ion beam analysis techniquesIllustrates specific applications, including biomedicine and thin film analysisProvides examples of ion beam analysis in traditional and emerging research fields Supplying readers with the means to understand the benefits and limitations of IBA, the book offers practical information that users can immediately apply to their own work. It covers the broad range of current and emerging applications in materials science, physics, art, archaeology, and biology. It also includes a chapter on computer applications of IBA.

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Modern technology depends on materials with precisely controlled properties. Ion beams are a favoured method to achieve controlled modification of surface and near-surface regions. In every integrated circuit production line, for example, there are ion implantation systems. In addition to integrated circuit technology, ion beams are used to modify the mechanical, tribological and chemical properties of metal, intermetallic and ceramic materials without altering their bulk properties. Ion–solid interactions are the foundation that underlies the broad application of ion beams to the modification of materials. This text is designed to cover the fundamentals and applications of ion–solid interactions and is aimed at graduate students and researchers interested in electronic devices, surface engineering, reactor and nuclear engineering and material science issues associated with metastable phase synthesis.