Prateek Asthana

Orthodontic tooth movement is a complex process that needs to be done with a detail knowledge of various factors affecting it in order to achieve optimal and needful movement of teeth while treating different kinds of mal-occlusion. OTM can occur rapidly or slowly, depending on the physical characteristics of the applied force, and the size and biological response of the PDL(Periodontal ligament). The orthodontic forces can be heavy or light, which causes rapid or slow tooth movement. Therefore, optimal orthodontic force plays an important role for maximum tooth movement to occur with minimal tissue damage and discomfort to patient.

Orthodontic space closure should be individually planned based on the diagnosis and treatment plan. The selection of any treatment modality, whether a technique, stage, spring, or appliance designs, should be based on the desired tooth movement. Orthodontic space closure should be individually planned based on the diagnosis and treatment plan. The selection of any treatment modality, whether a technique, stage, spring, or appliance designs, should be based on the desired tooth movement.

Orthodontic tooth movement can be carried out successfully with endodontically treated teeth. It is always recommend to use of moderate and intermittent forces enables sufficient tooth movement, limits the damage in the pulp, and allows the damaged pulp healing. Endodontically treated teeth can be moved orthodontically as readily as teeth with vital pulps. If teeth require root canal treatment during orthodontic movement, it is recommended that the root canals be cleaned, shaped and an interim dressing of calcium hydroxide be placed. The tooth should be sealed occlusally to prevent bacterial leakage. Canal obturation is accomplished upon the completion of orthodontic tooth movement.

This book is aimed at improving the power consumption and timing parameter for Dynamic Random Access Memory cells which are used in the construction of the main memory cell. DRAM is widely used for main memories in personal and mainframe computers and engineering workstations. DRAM memory cell is used for reading and write operation for single bit storage for circuits. A single DRAM cell is capable of storing 1bit data in the capacitor in the form of charge. In this book, three different DRAM memory cells are constructed on TANNER EDA, their simulation is carried out. Average power consumption, read access time, write access time and retention time values are calculated for all the three SDRAM cells. The three DRAM cells used are 4T, 3T, and 3T1D DRAM memory cells. Average power consumption, read access time, write access time and retention time-values are calculated at varying supply voltages. To improve the average power consumption, read access time, write access time, and retention time of the 3T1D DRAM memory cell techniques are applied. After the application of techniques on the circuit design, all the parameter values are again calculated and compared with existing value.