Rudra Sankar Dhar

This book focuses in the development of a novel structure that can be in corporate to form a device with two strained Si layers in the channel region forming tri-layered strained channel heterostructure on insulator (HOI) nano-MOS system, which can be implemented to form a NanoFET. The heterostructure channel based on NanoFET consisting of mobility enriched double strained Si layers sandwiching the strained SiGe in between significantly enhances electron mobility in comparison to the conventional device of s-Si on relaxed SiGe channel MOSFET, leading to improved device performance without implementing any additional scaling.