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Kirjailija

Viranjay M. Srivastava

Kirjat ja teokset yhdessä paikassa: 2 kirjaa, julkaisuja vuosilta 2013–2016, suosituimpiin kuuluu MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch. Vertaile teosten hintoja ja tarkista saatavuus suomalaisista kirjakaupoista.

2 kirjaa

Kirjojen julkaisuvuodet: 2013–2016.

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

Viranjay M. Srivastava; Ghanshyam Singh

Springer International Publishing AG
2016
nidottu
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

Viranjay M. Srivastava; Ghanshyam Singh

Springer International Publishing AG
2013
sidottu
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.