Kirjojen hintavertailu – 12 859 828 kirjaa ja 27 kauppaa

Kirjailija

Yuhua Cheng

Kirjat ja teokset yhdessä paikassa: 4 kirjaa, julkaisuja vuosilta 1999–2024, suosituimpiin kuuluu Multi-Sensor Filtering Fusion with Censored Data Under a Constrained Network Environment. Vertaile teosten hintoja ja tarkista saatavuus suomalaisista kirjakaupoista.

4 kirjaa

Kirjojen julkaisuvuodet: 1999–2024.

Multi-Sensor Filtering Fusion with Censored Data Under a Constrained Network Environment
This book presents the up-to-date research developments and novel methodologies on Multi-Sensor filtering fusion (MSFF) for a class of complex systems subject to censored data under a constrained network environment. The contents of this book are divided into two parts covering centralized and distributed MSFF design methodologies. The work provides a framework of optimal centralized/distributed filter design and stability and performance analysis for the considered systems along with designed filters. Simulations presented in this book are implemented using MATLAB. Features:Includes concepts, backgrounds and models on censored data, filtering fusion and communication constraints. Reviews case studies to provide clear engineering insights into the developed fusion theories and techniques. Provides theoretic values and engineering insights of the censored data and constrained network. Discusses performance evaluation of the presented multi-sensor fusion algorithms. Explores promising research directions on future multi-sensor fusion. This book is aimed at graduate students and researchers in networked control, sensor networks, and data fusion.
Device Modeling for Analog and RF CMOS Circuit Design

Device Modeling for Analog and RF CMOS Circuit Design

Trond Ytterdal; Yuhua Cheng; Tor A. Fjeldly

John Wiley Sons Inc
2003
sidottu
In order to keep up with global demand, microelectronics engineers are continually challenged to produce increasingly complex, high performance integrated circuits. The steady downscaling of MOSFET/CMOS technology has highlighted the need for a thorough understanding of the properties, potentials and limitations of the latest device models and technology. Presenting state-of-the-art MOSFET models, this book will prove a valuable reference and text for engineers striving to achieve first-time-right, reduced time-to-market silicon products. Featuring: *A complete survey of the CMOS device models used in modern analog and RF integrated circuit design. *A thorough treatment of the device modeling challenges faced by designers today. *An examination of the most commonly used MOSFET models, including BSIM4 and EKV. *A discussion of the modeling of process variations and device mismatch effects, along with device model quality assurance. *Two accompanying software packages, AIM-Spice and MOSCalc, available via the Internet. Bridging the gap between modeling and analog circuit design Device Modeling for Analog & RF CMOS Circuit Design will appeal to practicing microelectronics engineers and senior and graduate level students following courses in analog integrated circuit design.
MOSFET Modeling & BSIM3 User’s Guide

MOSFET Modeling & BSIM3 User’s Guide

Yuhua Cheng

Springer-Verlag New York Inc.
2013
nidottu
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. Itis helpful to experts and students alike.
MOSFET Modeling & BSIM3 User’s Guide
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. Itis helpful to experts and students alike.