Manvinder Sharma

Bei der Entwicklung von mikroelektronischen Ger ten mit h herer Dichte wirken sich die Spannungen aus, die durch unterschiedliche W rmeausdehnungskoeffizienten (WAK) der verwendeten Materialien verursacht werden. Hier er rtere ich den Einsatz der 3D-Kornkontinuumsmodellierung zur Untersuchung der durch Unterschiede in der Dehnungsenergiedichte verursachten Korngrenzenmigration. Comsol Multiphysics 4.3a (CM) wird zur Berechnung von Spannungen und Dehnungsenergiedichten in polykristallinen Strukturen verwendet, die durch Temperatur nderungen verursacht werden. Wir behandeln jedes Korn als Einkristall, wobei die anisotropen elastischen Eigenschaften von einkristallinem Cu entsprechend gedreht werden, um der Kornorientierung im Raum zu entsprechen.

Le d veloppement de dispositifs micro lectroniques de plus haute densit est l'impact des contraintes induites par les disparit s de coefficient de dilatation thermique (CTE) des mat riaux utilis s. Je discute ici de l'utilisation de la mod lisation 3D du continuum des grains pour tudier la migration des joints de grains induite par les diff rences de densit d' nergie de d formation. Comsol Multiphysics 4.3a (CM) est utilis pour calculer les contraintes et les densit s d' nergie de d formation dans les structures polycristallines caus es par les changements de temp rature. Nous traitons chaque grain comme un monocristal, avec les propri t s lastiques anisotropes du monocristal de Cu tourn es de mani re appropri e pour correspondre l'orientation du grain dans l'espace.

O desenvolvimento de dispositivos microelectr nicos de maior densidade o impacto das tens es induzidas pelos desajustes de Coeficiente de Expans o T rmica (CTE) dos materiais utilizados. Aqui discuto a utiliza o da modela o cont nua de gr o 3D para estudar a migra o de limites de gr o impulsionada por diferen as na densidade de energia de deforma o. A Comsol Multiphysics 4.3a (CM) est a ser utilizada para calcular as tens es e densidades de energia de deforma o em estruturas policristalinas causadas por altera es de temperatura. Tratamos cada gr o como um nico cristal, com as propriedades el sticas anisotr picas de um nico cristal Cu devidamente rodado para corresponder orienta o do gr o no espa o.

Lo sviluppo di dispositivi microelettronici a pi alta densit l'impatto delle sollecitazioni indotte dai disallineamenti del coefficiente di espansione termica (CTE) dei materiali utilizzati. Qui discuto l'uso della modellazione 3D del continuum dei grani per studiare la migrazione dei confini dei grani guidata da differenze nella densit di energia di deformazione. Comsol Multiphysics 4.3a (CM) viene utilizzato per calcolare le sollecitazioni e le densit di energia di deformazione nelle strutture policristalline causate da variazioni di temperatura. Trattiamo ogni grano come un cristallo singolo, con le propriet elastiche anisotrope del cristallo singolo Cu opportunamente ruotate per corrispondere all'orientamento del grano nello spazio.

Face to Face Stacking on Wafer to Wafer (WoW) can be done for the Cu-Cu direct bonding interconnects. A good mechanical strength to sustain shear force during thinning can be achieved by Cu bonding. While making reliable interconnect structures has been a persistent challenge. Stress results from material deposition, thermal expansion mismatch, and electromigration. Material deposition inevitably generates stress. Materials in interconnect structures, selected to function as conductors, dielectrics, or barriers, have dissimilar thermal expansion coefficients. The driving force comes from the stress built up due to grain growth and the thermal expansion mismatch (CTE) between Cu interconnect and dielectrics. The void space is then created in order to release the resulting stress. Also the electromigration phenomena caused due to current stressing and creates a void. So in this project, I worked on Stress Induced Voiding and Electromigration of Cu-Cu direct bonding sample with bonding temperature of 300C.

Digital image and video in their raw form require an enormous amount of storage capacity and the number of such applications is increasing day by day. Also the huge data systems also contain a lot of redundant information. As massive data transfer is taking place over communication links, compression of data to be stored or transmitted reduces storage space and transmission bandwidth as redundant information is removed. Compression also increases the capacity of the communication channel. Considering the important role played by digital imaging and video in today's world, it is necessary to develop a system that produces high degree of compression while preserving critical image or video information.